NSN 5962012703486 (Microcircuit Memory) | NSN Parts Lookup

If you're in need of NSN 5962012703486 parts such as IDT6116SA150DB, HM6116-3, A3028081-2, 9481-00085, 6116S150DB, which have been manufactured by Hitachi Ltd, Epson Electronics America Inc, Integrated Device Technology Inc, Bae Systems Operations Limited Dba Bae Systems Plc, Industrial Electronic Engineers we can provide assistance. At ASAP Aero Supplies, we are a renowned distributor with an inventory of over 2 billion obsolete parts from more than 5,000 manufacturers around the world, which are ready for shipment. Our specialty lies in being the reputable distributor of NSN 5962012703486, also known as Microcircuit Memory parts.

We are dedicated to provide you with the premium quality NSN parts possible, including NSN 5962012703486. As the only independent distributor in the USA,  We pledge not source from China, you can be assured that we will go above and beyond to fulfill your needs.

Information for NSN 5962012703486, 5962-01-270-3486

Part Number's List for NSN 5962012703486, 5962-01-270-3486

Part No Manufacturer Item Name QTY RFQ
IDT6116SA150DB hitachi ltd microcircuit memory Avl RFQ
IDT6116SA150DB epson electronics america inc microcircuit memory Avl RFQ
IDT6116SA150DB integrated device technology inc microcircuit memory Avl RFQ
HM6116-3 hitachi ltd microcircuit memory Avl RFQ
A3028081-2 hitachi ltd microcircuit memory Avl RFQ
9481-00085 hitachi ltd microcircuit memory Avl RFQ
9481-00085 bae systems operations limited dba bae systems plc microcircuit memory Avl RFQ
6116S150DB integrated device technology inc microcircuit memory Avl RFQ
47185-01 hitachi ltd microcircuit memory Avl RFQ
47185 01 industrial electronic engineers microcircuit memory Avl RFQ
351-5642-042 rockwell collins inc microcircuit memory Avl RFQ
351-5642-042 hitachi ltd microcircuit memory Avl RFQ

5962-01-270-3486 Characteristics Data

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING550 0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
CBBLFEATURES PROVIDEDSTATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN14 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
TTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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