RFQ For 352-1090-240 NSN part by Synergetic Technologies Group Inc with NSN 5961-01-080-1220

Part Number 352-1090-240 Specification

Part Number : 352-1090-240 NSN : 5961010801220
Alternate P/N : 3521090240 Item Name : Semiconductor Devic
Manufacturer : Synergetic Technologies Group Inc CAGE Code : 1BAM3
FSC Details : 5961 Semiconductor Devices and Associated Hardware NIIN : 010801220
FSG : 59 Electrical and Electronic Equipment Components NCB Code : 01
Country : USA INC Code : 20590

Our advanced, customized database enables rapid responses to RFQs for aerospace and aviation components, including 352-1090-240 (NSN 5961010801220), manufactured by Synergetic Technologies Group Inc (CAGE Code 1BAM3). With the part description Semiconductor Devic., we can provide a quote within 15 minutes, ensuring efficiency for your procurement needs.

This component, classified under FSG 59 Electrical and Electronic Equipment Components/FSC 5961 Semiconductor Devices and Associated Hardware, includes identifiers such as NIIN 01-080-1220, INC 20590, and NCB Code 01 (Origin: USA). These details guarantee precise part matching, so you procure exactly what your project requires.

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To expedite your request for NSN 5961010801220 (Part Number 352-1090-240, classified under FSC 5961 Semiconductor Devices and Associated Hardware with NIIN 01-080-1220), please complete all required fields in our RFQ form. This enables us to prioritize your inquiry effectively. Our team guarantees a response from a dedicated representative within 15 minutes of receiving your submission.

NSN Information for Part Number 352-1090-240 with NSN 5961-01-080-1220, 5961010801220

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-080-1220

Item Description:

Semiconductor Device Set

59610108012200NB5961010884923
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
352-1090-240515

Characteristics Data of NSN 5961-01-080-1220, 5961010801220

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALCERAMIC ALL TRANSISTOR
ABHPOVERALL LENGTH0 980 INCHES MAXIMUM ALL TRANSISTOR
ABKWOVERALL HEIGHT0 300 INCHES MAXIMUM ALL TRANSISTOR
ABMKOVERALL WIDTH0 865 INCHES MAXIMUM ALL TRANSISTOR
AKPVMOUNTING FACILITY QUANTITY2 ALL TRANSISTOR
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT ALL TRANSISTOR
ASCQINTERNAL JUNCTION CONFIGURATIONNPN ALL TRANSISTOR
ASDDCOMPONENT FUNCTION RELATIONSHIPMATCHED
ASKACOMPONENT NAME AND QUANTITY4 TRANSISTOR
AXGYMOUNTING METHODUNTHREADED HOLE ALL TRANSISTOR
BBJDFIELD FORCE EFFECT TYPEELECTROSTATIC CHARGE
CTMZSEMICONDUCTOR MATERIALSILICON ALL TRANSISTOR
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC65 0 MAXIMUM COLLECTOR TO BASE VOLTAGESTATICEMITTER OPEN ALL TRANSISTOR AND 33 0 MAXIMUM COLLECTOR TO EMITTER VOLTAGESTATICBASE OPEN ALL TRANSISTOR AND 65 0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE DC WITH BASE SHORT-CIRCUITED TO EMITTER A
CTQXCURRENT RATING PER CHARACTERISTIC3 00 AMPERES SOURCE CUTOFF CURRENT MINIMUM ALL TRANSISTOR AND 8 00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR
CTRDPOWER RATING PER CHARACTERISTIC140 0 WATTS SMALL-SIGNAL INPUT POWER COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150 0 DEG CELSIUS JUNCTION ALL TRANSISTOR
FEATSPECIAL FEATURESCERAMIC CASE CONTAINS BERYLLIUM OXIDE-HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
TESTTEST DATA DOCUMENT13499-352-1090 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA
TTQYTERMINAL TYPE AND QUANTITY6 RIBBON ALL TRANSISTOR

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