RFQ For M38510 20902BVB NSN part by Philips Semiconductors Ltd with NSN 5962-01-225-7035

Part Number M38510 20902BVB Specification

Part Number : M38510 20902BVB NSN : 5962012257035
Alternate P/N : M3851020902BVB Item Name : Microcircuit Memory
Manufacturer : Philips Semiconductors Ltd CAGE Code : 18324
FSC Details : 5962 Microcircuits Electronic NIIN : 012257035
FSG : 59 Electrical and Electronic Equipment Components NCB Code : 01
Country : USA INC Code : 41015

Our advanced, customized database enables rapid responses to RFQs for aerospace and aviation components, including M38510 20902BVB (NSN 5962012257035), manufactured by Philips Semiconductors Ltd (CAGE Code 18324). With the part description Microcircuit Memory., we can provide a quote within 15 minutes, ensuring efficiency for your procurement needs.

This component, classified under FSG 59 Electrical and Electronic Equipment Components/FSC 5962 Microcircuits Electronic, includes identifiers such as NIIN 01-225-7035, INC 41015, and NCB Code 01 (Origin: USA). These details guarantee precise part matching, so you procure exactly what your project requires.

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To expedite your request for NSN 5962012257035 (Part Number M38510 20902BVB, classified under FSC 5962 Microcircuits Electronic with NIIN 01-225-7035), please complete all required fields in our RFQ form. This enables us to prioritize your inquiry effectively. Our team guarantees a response from a dedicated representative within 15 minutes of receiving your submission.

NSN Information for Part Number M38510 20902BVB with NSN 5962-01-225-7035, 5962012257035

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-225-7035

Item Description:

Microcircuitmemory

59620122570350NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
5e8071253-App-0738215

Characteristics Data of NSN 5962-01-225-7035, 5962012257035

MRCCriteriaCharacteristic
ADAQBODY LENGTH0 930 INCHES MAXIMUM
ADATBODY WIDTH0 310 INCHES MAXIMUM
ADAUBODY HEIGHT0 120 INCHES MAXIMUM
AFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
CQZPINPUT CIRCUIT PATTERN12 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
CZZZMEMORY CAPACITYUNKNOWN
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
TTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT

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